Analytical models for the surface potential and electrical field distribution of bulk-silicon RESURF devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. High voltage thin layer devices (RESURF devices);Appels;IEEE IEDM Tech. Digest,1979
2. Ludikhuize AW. A review of RESURF technology. In: ISPSD’2000. p. 11–8
3. Lateral HVIC with 1200 V bipolar and field-effect devices;Chang;IEEE Trans. Electron Dev.,1986
4. An overview of smart power technology;Baliaga;IEEE Trans. Electron Dev.,1991
5. Surface field distribution and breakdown voltage of RESURF LDMOSFETs;Han;Microelectron. J.,2000
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1. Theoretical study on optimization criterion of the triple RESURF lateral power devices via virtual junction concept;Japanese Journal of Applied Physics;2021-03-01
2. Layout Arrangement Concern for Lateral DMOS With Large Geometric Array Used as Output Device;IEEE Transactions on Device and Materials Reliability;2017-06
3. Analytical model for silicon-on-insulator lateral high-voltage devices using variation of lateral thickness technique;Japanese Journal of Applied Physics;2015-01-26
4. Analytical models of lateral power devices with arbitrary vertical doping profiles in the drift region;Chinese Physics B;2013-05
5. An Analytical Model of Triple RESURF Device with Linear P-layer Doping Profile;IETE Technical Review;2013
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