Author:
Juang Miin-Horng,Chang C.W.,Wang J.L.,Shye D.C.,Hwang C.C.,Jang S.-L.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Hayashi F, Ohkubo H, Takahashi T, Horiba S, Noda K, Uchida T, et al. International electron device meeting tech digest; 1996. p. 283.
2. Oshima H, Morozumi S. In: International electron devices meeting tech digest; 1989. p. 157.
3. Mechanisms of interface trap-induced drain leakage current in off-state n-MOSFET's
4. Anomalous leakage current in LPCVD PolySilicon MOSFET's
5. Numerical analysis of poly-TFTs under off conditions
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