A novel vertical stepped doping poly-Si TFT (VSD-TFT) for leakage current improvement
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference14 articles.
1. Formation of poly crystalline-Si thin-film transistors with a retrograde channel doping profile;Juang;Solid State Electronics,2009
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3. Study of polycrystalline-Si thin-film transistors with different channel layer thickness at low bias voltage;Juang;Microelectronic Engineering,2010
4. A p- channel SMC poly-Si thin film transistor with a GOLDD structure;Son;Current Applied Physics2,2002
5. A new polycrystalline silicon TFT With a single grain boundary in the channel;Jeon;IEEE Electron Devices Letters,2001
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