A high Schottky barrier between Ni and S-passivated n-type Si(100) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference22 articles.
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4. Ideal Schottky diodes on passivated silicon;Wittmer;Phys Rev B,1992
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