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Photoresponses of the back-side illuminated GaAs photoconductive semiconductor switches in the linear mode

  • Published:2020-02 Issue: Volume:164 Page:107680
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Kim Yong Pyo,Choi Pyeung Hwi,Kim Min-Seong,Ryu Jiheon,Baek Sung-hyun,Hong Sung-Min,Lee Sungbae,Jang Jae-Hyung

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Toward pulsed power uses for photoconductive semiconductor switches;Loubriel;Proc 6th Pulsed Power Conf,1987

2. High-power microwave generation using optically activated semiconductor switches;Nunnally;IEEE Trans Electron Devices,1990

3. 35-kV GaAs subnanosecond photoconductive switches;Pocha;IEEE Trans Electron Devices,1990

4. Recovery of high-field GaAs photoconductive semiconductor switches;Zutavern;IEEE Trans Electron Devices,1991

5. Photoconductive semiconductor switches;Loubriel;IEEE Trans Plasma Sci,1997

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1. Influence on the Parameters of GaAs-based HG PCSS Switching in Lock-On Mode at Laser Radiation With a Wavelength of 355 nm and 1064 nm;2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM);2023-06-29

2. Low Specific Contact Resistivity of 10−3Ω·cm2 for Ti/Al/Ni/Au Multilayer Metals on SI-GaN:Fe Substrate;IEEE Transactions on Electron Devices;2022-10
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