Author:
Bühler R.T.,Agopian P.G.D.,Collaert N.,Simoen E.,Claeys C.,Martino J.A.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors;Welser;IEEE Electron Dev Lett,1994
2. Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate;Sekigawa;Solid-State Electron,1984
3. IntelPR. Intel Reinvents Transistors Using New 3-D Structure. 2011, May .
4. Multiple-gate SOI MOSFETs;Colinge;Solid-State Electron,2004
5. Strain effect in semiconductors;Sum,2010
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