On the use of a localized STRASS technique to obtain highly tensile strained Si regions in advanced FDSOI CMOS devices-Reference-Cited by-同舟云学术

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On the use of a localized STRASS technique to obtain highly tensile strained Si regions in advanced FDSOI CMOS devices

Published:2016-08-09 Issue:10-12 Volume:13 Page:740-745
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Bonnevialle A.,Reboh S.,Le Royer C.,Morand Y.,Hartmann J.-M.,Rouchon D.,Pedini J.-M.,Tabone C.,Rambal N.,Payet A.,Plantier C.,Boeuf F.,Haond M.,Claverie A.,Vinet M.

Funder

frame of the ST/LETI collaboration, with support of Nano2017, WayToGoFast projects

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strained Silicon Technology: Non-Destructive High-Lateral-Resolution Characterization Through Tip-Enhanced Raman Spectroscopy;Applied Spectroscopy;2024-04-17

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