Author:
Mohamad B.,Leroux C.,Rideau D.,Haond M.,Reimbold G.,Ghibaudo G.
Funder
MINOS Laboratory of French ANR and WAYTOGO FAST ECSEL Project
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Effective work function modulation by sacrificial gate aluminum diffusion on HfON-based 14nm NMOS devices;Suarez-Segovia;Microelectr Eng,2015
2. Investigating doping effects on high-k metal gate stack for effective work function engineering;Leroux;Microelectr Eng,2007
3. Parameters extraction in SiGe/Si pMOSFETs using split CV technique;Soussou,2013
4. Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14nm NFET devices;Suarez-Segovia,2015
5. Full front and back split C-V characterization of CMOS devices from 14nm node FDSOI technology;Mohamad,2015
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