Author:
Lim Donghwan,Han Hoonhee,Choi Changhwan
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. The International Technology Roadmap for Semiconductors (ITRS); 2015. Available: .
2. Choi WY, Song JY, Lee JD, Park YJ, Park B-G. 70-nm impact-ionization metal–oxide–semiconductor (I-MOS) devices integrated with tunneling field-effect transistors (TFETs). In: IEDM Tech Dig; 2005, p. 975–8.
3. Morris DH, Vaidyanathan K, Avci UE, Liu H, Karnik T, Young IA. Enabling high-performance heterogeneous TFET/CMOS logic with novel circuits using TFET unidirectionality and low-VDD operation. In: IEEE Symp VLSI Tech; 2016.
4. Low-subthreshold-swing tunnel transistors;Zhang;IEEE Electron Device Lett,2006
5. Steegen A. Technology innovation in an IoT Era. In: IEEE Symp VLSI Tech invited; 2015, p. C170–1.
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