A physics-based analytical solution to the surface potential of polysilicon thin film transistors using the Lambert W function-Reference-Cited by-同舟云学术

A physics-based analytical solution to the surface potential of polysilicon thin film transistors using the Lambert W function

Published:2007-06 Issue:6 Volume:51 Page:975-981
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chen Rongsheng,Zheng Xueren,Deng Wanling,Wu Zhaohui

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

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3. A short-channel DC SPICE model for polysilicon thin-film transistors including temperature effects;Jacunski;IEEE Trans Electron Devic,1999

4. A physical-based analytical turn-on model of poly-Si TFT’s for circuit simulation;Yang;IEEE Trans Electron Devic,1999

5. Surface-potential-based charge sheet model for the polysilicon thin film transistors without considering kink effect;Siddiqui;Microelectr J,2001

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