A physics-based compact model for MoS2 field-effect transistors considering the band-tail effect and contact resistance-Reference-Cited by-同舟云学术

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A physics-based compact model for MoS2 field-effect transistors considering the band-tail effect and contact resistance

Published:2020-10-01 Issue:10 Volume:59 Page:104004
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liu Yuan,Zeng Jiawei,Zhu Zeqi,Dong Xiao,Deng Wanling

Funder

International Science & Technology Cooperation Program of Guangzhou

Key-Area Research and Development Program of Guangdong Province

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.35848/1347-4065/abb7e1/pdf

Reference25 articles.

1. High Performance Multilayer MoS2 Transistors with Scandium Contacts

2. How Good Can Monolayer MoS2 Transistors Be?

3. Integrated Circuits Based on Bilayer MoS2 Transistors

4. Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors

5. A Short-Channel $I$ – $V$ Model for 2-D MOSFETs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unified Charge Control Model for Back-Gated 2-D Field Effect Transistors;IEEE Transactions on Electron Devices;2024-01

2. The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms;Advanced Materials;2022-10-17

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