Author:
Mroczyński Robert,Ożga Monika,Godlewski Marek,Witkowski Bartłomiej S.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference30 articles.
1. “Nanoionics-Enabled Memristive Devices: Strategies and Materials for Neuromorphic Applications” in Adv;Wang;Electron Mater,2017
2. “Resistive switching memories based on metal oxides: mechanisms, reliability and scaling” in Semicond;Ielmini;Sci Technol,2016
3. H.-S. Philip Wong, H.-Y. Lee, S. Yu, Y.-S. Chen, Y. Wu, P.-S. Chen, B. Lee, F. T. Chen, and M.-J. Tsai, “Metal-Oxide RRAM” in Proc. of IEEE 100(6) 1951-1970 (2012), 10.1109/JPROC.2012.2190369.
4. “Observation of conducting filament growth in nanoscale resistive memories” in Nat;Yang;Commun,2012
5. “Large resistive-switching phenomena observed in Ag/Si3N4/Al memory cells” in Semicond;Kim;Sci Technol,2010
Cited by
11 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献