Wide frequency band assessment of 28nm FDSOI technology platform for analogue and RF applications-Reference-Cited by-同舟云学术

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Wide frequency band assessment of 28nm FDSOI technology platform for analogue and RF applications

Published:2015-06 Issue: Volume:108 Page:47-52
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Makovejev S.,Kazemi Esfeh B.,Barral V.,Planes N.,Haond M.,Flandre D.,Raskin J.-P.,Kilchytska V.

Funder

FNRS

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Liu Q, Yagishita A, Loubet N, Khakifirooz A, Kulkarni P, Yamamoto T, et al. Ultra-Thin-Body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond. In: Symposium on VLSI technology; 2010. p. 61–2.

2. Multi-VT UTBB FDSOI device architectures for low-power CMOS circuit;Noel;IEEE Trans Electr Dev,2011

3. Analysis of self-heating effects in ultrathin-body SOI MOSFETs by device simulation;Fiegna;IEEE Trans Electr Dev,2008

4. Weber O, Faynot O, Andrieu F, Buj-Dufournet C, Allain F, Scheiblin P, et al. High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding. In: International electron devices meeting IEDM; 2008.

5. Planes N, Weber O, Barral V, Haendler S, Noblet D, Croain D, et al. 28 nm FDSOI technology platform for high-speed low-voltage digital applications. In: Symposium on VLSI technology, vol. 33, no. 4; 2012. p. 133–4.

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1. Heat sink implementation in back-end of line for self-heating reduction in 22 nm FDSOI MOSFETs;Solid-State Electronics;2021-10

2. Assessment of RF compact modelling of FD SOI transistors;2021 IEEE Latin America Electron Devices Conference (LAEDC);2021-04-19

3. Extensive Electrical Characterization Methodology of Advanced MOSFETs Towards Analog and RF Applications;IEEE Journal of the Electron Devices Society;2021

4. Effect of Heat Sink in Back-End of Line on Self-Heating in 22 nm FDSOI MOSFETs;2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS);2020-09-01

5. Evidence of Limitations of the Transconductance-to-Drain-Current Method (gm/Id) for Transistor Sizing in 28 nm UTBB FD-SOI Transistors;Journal of Low Power Electronics and Applications;2020-05-15

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