Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC-Reference-Cited by-同舟云学术

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Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC

Published:2007-05 Issue:5 Volume:51 Page:797-801
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Jennings M.R.,Pérez-Tomás A.,Davies M.,Walker D.,Zhu L.,Losee P.,Huang W.,Balachandran S.,Guy O.J.,Covington J.A.,Chow T.P.,Mawby P.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Optimum Semiconductors for high-power electronics;Shenai;IEEE Trans Electron Dev,1989

2. SiC and GaN bipolar power devices;Chow;Solid State Electron,2000

3. 4H-SiC bipolar junction transistor with high current and power density;Perez-Wurfl;Solid State Electron,2003

4. Mechanism of ohmic behavior of Al/Ti contacts to p-type 4H-SiC after annealing;Johnson;J Appl Phys,2004

5. The effect of titanium on Al–Ti contacts to p-type 4H-SiC;Johnson;Solid State Electron,2003

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metal Contact on P-Type 4H-SiC With Low Specific Contact Resistance and Micrometer-Scale Contact Area;IEEE Electron Device Letters;2023-09

2. Low temperature Cu/Ti/Al Ohmic contacts to p-type 4H-SiC;Journal of Alloys and Compounds;2022-04

3. Low temperature Ni/Si/Al ohmic contacts to p-type 4H-SiC;Solid-State Electronics;2021-12

4. Device Processing Chain and Processing SiC in a Foundry Environment;Wide Bandgap Semiconductors for Power Electronics;2021-10-29

5. A critical review of theory and progress in Ohmic contacts to p-type SiC;Journal of Crystal Growth;2020-02

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