Author:
Haugerud Becca M.,Nayeem Mustayeen B.,Krithivasan Ramkumar,Lu Yuan,Zhu Chendong,Cressler John D.,Belford Rona E.,Joseph Alvin J.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Enhanced mobility CMOS;Hoyt;Electrochem Soc Proc,2004
2. A 90-nm logic technology featuring strained silicon;Thompson;IEEE Trans Electron Dev,2004
3. Mechanically induced strain enhancement of metal–oxide–semiconductor field effect transistors;Haugerud;J Appl Phys,2003
4. BICMOS devices under mechanical strain;Liu;Electrochem Soc Proc,2004
5. Mechanically strained Si–SiGe HBTs;Yuan;IEEE Electron Dev Lett,2004
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献