The effects of mechanical planar biaxial strain in Si/SiGe HBT BiCMOS technology

Author:

Haugerud Becca M.,Nayeem Mustayeen B.,Krithivasan Ramkumar,Lu Yuan,Zhu Chendong,Cressler John D.,Belford Rona E.,Joseph Alvin J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Enhanced mobility CMOS;Hoyt;Electrochem Soc Proc,2004

2. A 90-nm logic technology featuring strained silicon;Thompson;IEEE Trans Electron Dev,2004

3. Mechanically induced strain enhancement of metal–oxide–semiconductor field effect transistors;Haugerud;J Appl Phys,2003

4. BICMOS devices under mechanical strain;Liu;Electrochem Soc Proc,2004

5. Mechanically strained Si–SiGe HBTs;Yuan;IEEE Electron Dev Lett,2004

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1. A Strained Si/SiGe Heterojunction Bipolar Transistor with Thin Si3N4 Film Fabricated on SOI Substrate;2020 5th International Conference on Information Science, Computer Technology and Transportation (ISCTT);2020-11

2. Performance Enhancement in Bipolar Junction Transistors Using Uniaxial Stress on (100) Silicon;IEEE Transactions on Electron Devices;2016-07

3. A 1D numerical model for rapid stress analysis in bipolar junction transistors;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2016-05-27

4. Stress models relevant to Raman spectrum in uniaxial/biaxial strained Si;Acta Physica Sinica;2012

5. Improving the high-frequency performance of SiGe HBTs by a global additional uniaxial stress;Solid-State Electronics;2011-06

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