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Characterization and modeling of low frequency noise in CMOS inverters

  • Published:2013-03 Issue: Volume:81 Page:151-156
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Ioannidis E.G.,Haendler S.,Dimitriadis C.A.,Ghibaudo G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Efficient Characterization Methodology for Low-Frequency Noise Monitoring;2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS);2024-04-15

2. Low‐frequency noise model development of MoS2 field effect transistor and its analysis with respect to different traps;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-12-12

3. Fully integrated FET-type gas sensor with optimized signal-to-noise ratio for H2S gas detection;Sensors and Actuators B: Chemical;2022-09

4. Fully Integrated Fet-Type Gas Sensor with Optimized Signal-to-Noise Ratio for H2s Gas Detection;SSRN Electronic Journal;2022

5. Highly Sensitive Amplifier Circuit Consisting of Complementary pFET-type and Resistor-type Gas Sensors;2020 IEEE International Electron Devices Meeting (IEDM);2020-12-12
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