Analysis of anomalous C-V behavior for extracting the traps density in the undoped polysilicon with a double-BOX structure
Author:
Funder
University of Chinese Academy of Sciences
China Scholarship Council
Publisher
Elsevier BV
Reference11 articles.
1. RF performance of a commercial SOI technology transferred onto a passivated HR silicon substrate;Lederer;IEEE Trans Electron Devices,2008
2. Effective resistivity of fully-processed SOI substrates;Lederer;Solid State Electron,2005
3. New substrate passivation method dedicated to HR SOI wafer fabrication with increased substrate resistivity;Lederer;IEEE Electron Device Lett,2005
4. RF harmonic distortion of CPW lines on HR-Si and trap-rich HR-Si substrates;Roda Neve;IEEE Trans Electron Devices,2012
5. Compact modeling of the transient carrier trap/detrap characteristics in polysilicon TFTs;Oodate;IEEE Trans Electron Devices,2015
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