Z2-FET: A promising FDSOI device for ESD protection-Reference-Cited by-同舟云学术

Z2-FET: A promising FDSOI device for ESD protection

Published:2014-07 Issue: Volume:97 Page:23-29
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Solaro Yohann,Wan Jing,Fonteneau Pascal,Fenouillet-Beranger Claire,Le Royer Cyrille,Zaslavsky Alexander,Ferrari Philippe,Cristoloveanu Sorin

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

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4. Mergens MPJ, Russ CC, Verhaege KG, Armer J, Jozwiak PC, Mohn R, et al. Diode-triggered SCR (DTSCR) for RF-ESD protection of BiCMOS SiGe HBTs and CMOS ultra-thin gate oxides. In: Electron devices meeting. IEDM ‘03 technical digest. IEEE, international; 2003. p. 21.3.1–4.

5. Di Sarro J, Vashchenko V, Rosenbaum E, Hopper P. A dual-base triggered SCR with very low leakage current and adjustable trigger voltage. In: Electrical overstress/electrostatic discharge symposium. EOS/ESD 2008; 30th, 2008. p. 242–8.

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