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Impact of scattering in ‘atomistic’ device simulations

  • Published:2005-05 Issue:5 Volume:49 Page:733-739
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Alexander C.,Brown A.R.,Watling J.R.,Asenov A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. International Technology Roadmap for Semiconductors. Available from: http://public.itrs.net/. SEMATECH, 2002

2. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1μm MOSFET’s: A 3-D “atomistic” simulation study;Asenov;IEEE Trans Electron Dev,1998

3. Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs’;Asenov;IEEE Trans Electron Dev,2003

4. Modeling statistical dopant fluctuations in MOS transistors;Stolk;IEEE Trans Electron Dev,1998

5. Hierarchical approach to ‘atomistic’ 3D MOSFET simulation;Asenov;IEEE Trans Comput Aided Des Integr Circuits Syst,1999

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