Accurate analytical modelling of cosmic ray induced failure rates of power semiconductor devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Kabza H et al. Cosmic radiation as a cause for power device failure and possible countermeasures. In: Proceedings of the sixth international symposium on power semiconductor devices and IC’s, Davos, Switzerland; 1994. p. 9–12.
2. Zeller HR. Cosmic ray induced breakdown in high voltage semiconductor devices, microscopic model and possible countermeasures. In: Proceedings of the sixth international symposium on power semiconductor devices and IC’s, Davos, Switzerland; 1994. p. 339–40.
3. Matsuda H et al. Analysis of GTO failure mode during d.c. blocking. In: Proceedings of the sixth international symposium on power semiconductor devices and IC’s, Davos, Switzerland; 1994. p. 221–5.
4. Nuclear physics of cosmic ray interaction with semiconductor materials: particle-induced soft errors from a physicist’s perspective;Tang;IBM J Res Develop,1996
5. Neutron-induced single event burnout in high voltage electronics;Normand;IEEE Trans Nucl Sci,1997
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