Selective thermal neutron transmutation doping with Gd masks in GaN semiconductors-Reference-Cited by-同舟云学术

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Selective thermal neutron transmutation doping with Gd masks in GaN semiconductors

Published:2023-01 Issue: Volume:199 Page:108510
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kim Jeongwoo,Frontzek Matthias,Crow Lowell,Kwon Jae W.

Funder

Advanced Research Projects Agency

Advanced Research Projects Agency - Energy

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Recent development of vertical GaN power devices;Oka;Jpn J Appl Phys,2019

2. The 2018 GaN power electronics roadmap;Amano;J Phys D: Appl Phys,2018

3. Materials and processing issues in vertical GaN power electronics;Hu;Mat Sci Semicond Process,2018

4. High Thermal Conductivity of Bulk GaN Single Crystal: An Accurate Experimental Determination;Inyushkin;Jetp Lett,2020

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect-curing effects of fast neutrons on n-type GaN;Materials Chemistry and Physics;2024-03

2. Infrared spectroscopy of nanocrystalline anatase (TiO2) particles under the neutron irradiation;Optical Materials;2023-10

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