Latch-up effects in CMOS inverters due to high power pulsed electromagnetic interference-Reference-Cited by-同舟云学术

Latch-up effects in CMOS inverters due to high power pulsed electromagnetic interference

Published:2008-10 Issue:10 Volume:52 Page:1589-1593
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kim Kyechong,Iliadis Agis A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Introduction to the special issue on high-power electromagnetics (HPEM) and intentional electromagnetic interference (IEMI);Radasky;IEEE Trans EMC,2004

2. Susceptibility of electronic systems to high-power microwaves: summary of test experience;Bäckström;IEEE Trans EMC,2004

3. The dawn of the E-bomb;Abrams;IEEE Spectrum,2003

4. Effects of microwave interference on the operational parameters of n-channel enhancement mode MOSFET devices in CMOS integrated circuits;Kim;Solid State Electron,2004

5. Impact of microwave interference on dynamic operation and power dissipation of CMOS inverters;Kim;IEEE Trans EMC,2007

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