Author:
Ojha Apoorva,Mohapatra Nihar R.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. A self-consistent solution of Schrodinger-Poisson equations using nonuniform mesh;Tan;J Appl Phys,1990
2. Quantum-mechanical effects on the threshold voltage of undoped double-gate MOSFETs;Trivedi;IEEE Electron Dev Lett,2005
3. A numerical model for solving two dimensional Poisson-Schrodinger equation in depletion all around operation of the SOI four gate transistor;Jahangir;IEEE EDSSC,2009
4. Schrodinger and Boltzmann equations by a full Newton-Raphson approach for nanoscale semiconductor devices;Ruic;SISPAD,2013
5. A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions;van Dort;Solid-State Electron,1994
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