Author:
Tong Xin,Liu Siyang,Zhao Xuehui,Xu Hao,Sun Weifeng,Li Shaohong,Wu Jianhui,Zhang Long,Yang Zhuo,Zhu Yuanzheng,Ye Peng
Funder
National Natural Science Foundation of China
Natural Science Foundation of Jiangsu Province
Foundation of State Key Laboratory of Wide-bandgap Semiconductor Power Electronics Devices
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Optimization of the specific on-resistance of the COOLMOS/sup TM/;Chen;IEEE Trans Electron Dev,2001
2. Superjunction power devices, history, development, and future prospects;Udrea;IEEE Trans Electron Dev,2017
3. A novel charge-imbalance termination for trench superjunction VDMOS;Qian;IEEE Electron Dev Lett,2010
4. Analysis of the reverse recovery oscillation of superjunction MOSFET body diode;Peng;Solid State Electron,2017
5. Zhu J, Yang Z, Sun W, Sun Y, Zhou J, Zheng Y, Ye P, Qing Z. Design criterion of the superjunction DMOS for low EMI noise in the flyback converter system. In: Proc. ISPSD, Prague, CZE, 2016, p. 331–34.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献