Author:
Schmidt M.,Minamisawa R.A.,Richter S.,Luptak R.,Hartmann J.-M.,Buca D.,Zhao Q.T.,Mantl S.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Complementary tunneling transistor for low power application;Wang;Solid-State Electron,2004
2. Choi WY, Song JY, Lee JD, Park YJ, Park BG. 70-nm impact-ionization metal-oxide-semiconductor (I-MOS) devices integrated with tunneling field-effect transistors (TFETs). In: Proc. international electron devices meeting; 2005. p. 955–8.
3. Low-subthreshold-swing tunnel transistors;Zhang;IEEE Electron Dev Lett,2006
4. Band-to-band tunneling in carbon nanotube field-effect transistors;Appenzeller;Phys Rev Lett,2004
5. Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60mV/dec;Choi;IEEE Electron Dev Lett,2007
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