Funder
European Commission
Horizon 2020 Framework Programme
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. A monolithic GaN power IC with on-chip gate driving, level shifting, and temperature sensing, achieving direct 48-V/1-V DC–DC conversion;Yan;IEEE J Solid State Circuits,2022
2. D. Brian Ma. Driving GaN power transistors—Circuit design challenges and opportunities. In: Proc. IEEE Int. Symp. Power Semiconductor Devices ICs (ISPSD), Shanghai, China; May 2019, p. 87–90.
3. Suppression of the backgating effect of enhancement-mode p-GaN HEMTs on 200-mm GaN-on-SOI for mono- lithic integration;Li;IEEE Electron Device Lett,2018
4. Device optimization for 200VGaN-on-SOI plat form for monolithicly integrated power circuits;Syshchyk,2022
5. 200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration;Li;IEEE Electron Device Lett,2017