Monolithic 3D-ICs with single grain Si thin film transistors-Reference-Cited by-同舟云学术

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Monolithic 3D-ICs with single grain Si thin film transistors

Published:2012-05 Issue: Volume:71 Page:80-87
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ishihara R.,Derakhshandeh J.,Tajari Mofrad M.R.,Chen T.,Golshani N.,Beenakker C.I.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference34 articles.

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2. Three-dimensional integrated circuits;Topol;IBM J Res Dev,2006

3. Ramm P, Klumpp A. Through-silicon via technologies for extreme miniaturized 3D integrated wireless sensor systems (e-CUBES). In: 2008 IEEE international interconnect technology conference, IITC; 2008. p. 7.

4. 3-D ICs: a novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration and systems-on-chip integration;Banerjee;Proc IEEE,2001

5. A review on 3-D packaging technology;Al-Sarawi;IEEE Trans Compon Packag Manuf Technol,1998

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