Diffusion in semiconductors
Author:
Publisher
Elsevier BV
Subject
Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science
Reference34 articles.
1. S.F. Wee, M.K. Chai, K.P. Homewood, W.P. Gillin, J. Appl. Phys., submitted.
2. The role of excess arsenic in interface mixing in low‐temperature‐grown AlAs/GaAs superlattices
3. Dependence of Al‐Ga interdiffusion in AlGaAs on stoichiometry between Ga‐rich and As‐rich solidus limits
4. Effects of dielectric encapsulation and As overpressure on Al‐Ga interdiffusion in AlxGa1−xAs‐GaAs quantum‐well heterostructures
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1. Maintaining atomically smooth GaAs surfaces after high-temperature processing for precise interdiffusion analysis and materials engineering;Journal of Vacuum Science & Technology B;2021-12
2. Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy;Superlattices and Microstructures;2021-02
3. Surface single-molecule dynamics controlled by entropy at low temperatures;Nature Communications;2017-02-09
4. Quantitative compositional profiles of enhanced intermixing in GaAs/AlGaAs quantum well heterostructures annealed with and without a SiO2cap layer;Semiconductor Science and Technology;2009-03-10
5. Multi-excitation entropy: its role in thermodynamics and kinetics;Reports on Progress in Physics;2006-03-13
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