Dependence of the recombination in thin-film Si solar cells grown by ion-assisted deposition on the crystallographic orientation of the substrate

Author:

Neuhaus D.H,Harder N.-P,Oelting S,Bardos R,Sproul A.B,Widenborg P,Aberle A.G

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. O. Nast, T. Puzzer, C.T. Chou, M. Birkholz, Grain size and structural analysis of polycrystalline silicon on glass formed by aluminium-induced crystallisation for thin-film solar cells, Conference Record 16th EC PVSEC, 2000, pp. 292–298.

2. N.-P. Harder, J.A. Xia, S. Oelting, O. Nast, P. Widenborg, A.G. Aberle, Low temperature epitaxial thickening of sub-micron poly Si seeding layers on glass made by aluminium-induced crystallisation, Conference Record 28th IEEE PVSC, 2000, pp. 351–354.

3. Formation of large-grained uniform poly Si films on glass at low temperature;Aberle;J. Crystal Growth,2001

4. S. Oelting, D. Martini, D. Bonnet, Crystalline thin film silicon solar cells by ion-assisted deposition, Conference Record 12th EC PVSEC, 1994, pp. 1815–1818.

5. Electronic properties of silicon epitaxial layers deposited by ion-assisted deposition at low temperatures;Oberbeck;J. Appl. Phys.,2000

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