Low frequency noise in SiGe-base heterojunction bipolar transistors and SiGe-channel metal oxide semiconductor field effect transistors-Reference-Cited by-同舟云学术

Low frequency noise in SiGe-base heterojunction bipolar transistors and SiGe-channel metal oxide semiconductor field effect transistors

Published:2000-11 Issue:11 Volume:40 Page:1897-1903
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Chroboczek J.A,Ghibaudo G

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Indirect gap of coherently strained GexSi1−x bulk alloys on 〈001〉 silicon substrates;People;J Quant Electron,1986

2. Silicon germanium alloys and heterostructures: optical and electronic properties;Pearsall;CRC Crit Rev Solid State Phys Mat Sci,1989

3. SiGe HBT technology: a new contender for Si-base RF and microwave applications;Cressler;IEEE Trans Microwav Theor Techniq,1998

4. SiGe heterostructures for FET applications;Whall;J Phys D, Appl Phys,1998

5. Rim K, et al. Transconductance enhancement in deep submicron strained-Si n-MOSFETs. IEDM'98 Techn Digest, IEEE Washington 1998. p. 707–9

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-frequency noise mechanisms in Si and pseudomorphic SiGe p-channel field-effect transistors;Applied Physics Letters;2004-12-13

2. Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE;Applied Surface Science;2004-03

3. Low-Frequency Noise Assessment for Deep Submicrometer CMOS Technology Nodes;Journal of The Electrochemical Society;2004

4. A REVIEW OF 1/f NOISE IN TERMS OF MOBILITY FLUCTUATIONS AND WHITE NOISE IN MODERN SUBMICRON BIPOLAR TRANSISTORS — BJTs AND HBTs;Fluctuation and Noise Letters;2001-12

5. Review of low-frequency noise in bipolar transistors over the last decade;Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212)