Quantification of scanning capacitance microscopy measurements for 2D dopant profiling-Reference-Cited by-同舟云学术

Quantification of scanning capacitance microscopy measurements for 2D dopant profiling

Published:2000-08 Issue:8-10 Volume:40 Page:1395-1399
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Malberti P.,Ciampolini L.,Ciappa M.,Fichtner W.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Status and review of 2D carrier profiling using SCM;De Wolf;J Vac Sci Techn,2000

2. SC spectroscopy: an analytical technique for PN junction delineation in Si devices;Edwards;Appl Phys Lett,1998

3. SCM measurement of two-dimensional dopant profiles across junctions;Kopanski;J Vac Sci Techn,1998

4. SCM for carrier profiling in semiconductors;Erickson;Solid State Technology,1997

5. Effective channel length and base width measurements by SCM;Raineri;J Vac Sci Techn,2000

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