Author:
He Jin,Zhang Xing,Huang Ru,Wang Yang-yuan
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference4 articles.
1. Carrier lifetime extraction in fully-depleted dual-gate SOI devices;Ernst;IEEE Electron Dev Lett,1999
2. He J, Huang R, Zhang X, Wang Yangyuan. Numerical analysis of characterized interface traps of the SOI devices by R–G current. Chin J Semicond 2000;CJS-21 (12):1145–51
3. He J, Huang R, Zhang X, Huang A, Wang Yangyuan. Gated-diode R–G current: a sensitive tool for characterizing the bulk traps of SOI devices. Chin J Electron 2001;CJE-10(2):372–6
4. Hu CM, Tam SC, Hsu FC, Ko P-K, Tung Yi chan, Terrill KW. Hot-electron-induced MOSFET degradation-model, monitor and improvement. IEEE Trans 1985;ED-32:375–85
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