Author:
Takao Yoshihiro,Kudo Hiroshi,Mitani Junichi,Kotani Yoshiyuki,Yamaguchi Satoshi,Yoshie Keizaburo,Sukegawa Kazuo,Naori Nobuhisa,Asai Satoru,Kawano Michiari,Nagano Takashi,Yamamura Ikuhiro,Uematsu Masaya,Nagashima Naoki,Kadomura Shingo
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference17 articles.
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4. Copper dual damascene interconnects with very low-k dielectrics targeting for 130 nm node;Kudo;Proc IITC,2000
5. A 0.13-μm CMOS technology integrating high-speed and low power/high-density devices with two different well/channel structures;Imai;IEDM Tech Digest,1999
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