MIM capacitance variation under electrical stress-Reference-Cited by-同舟云学术

MIM capacitance variation under electrical stress

Published:2003-08 Issue:8 Volume:43 Page:1237-1240
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Besset C.,Bruyère S.,Blonkowski S.,Crémer S.,Vincent E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Coelho R. Propriétés des dielectriques. Hermès; 1990

2. Dielectric reliability in deep-submicron technologies: from to ultrathin oxides;Vincent;Microelectron Reliab.,1997

3. Unified model for breakdown in thin and ultrathin gate oxides (12–5 nm);Kamoulakos;J. Appl. Phys.,1999

4. Handbook of chemistry and physics;Lide,1995

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