Reliability design of current stress in LSI interconnects using the estimation of failure rate due to electromigration-Reference-Cited by-同舟云学术

Reliability design of current stress in LSI interconnects using the estimation of failure rate due to electromigration

Published:1997-08 Issue:8 Volume:37 Page:1185-1191
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Hiraoka Kazunori,Nikaido Tadanobu

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Trends for deep submicron VLSI and their implications for reliability;Chatterjee,1995

2. Electromigration of Al-Si alloy films;Black,1978

3. Pulse current electromigration failure model;Brooke,1987

4. Electromigration-induced abrupt changes in electrical resistance associated with void dynamics in aluminum interconnections;Singubara;J. Appl. Phys.,1991

5. Two-step improvement of electromigration lifetime under high frequency pulsed conditions;Hiraoka,1990

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