New understanding of LDD NMOS hot-carrier degradation and device lifetime at cryogenic temperatures-Reference-Cited by-同舟云学术

New understanding of LDD NMOS hot-carrier degradation and device lifetime at cryogenic temperatures

Published:1997-10 Issue:10-11 Volume:37 Page:1747-1754
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Wang-Ratkovic Janet,Lacoe Ronald C.,MacWilliams Kenneth P.,Song Miryeong,Brown Stephanie,Yabiku Garenn

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

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2. Cold electronics: an overview;Kirschman,1984

3. Very Small MOSFETs for Low Temperature Operation;Gaensslen;IEEE Trans. Elec. Dev.,1977

4. The Effect of Interconnection Resistance on the Performance Enhancement of Liquid-Nitrogen-Cooled CMOS Circuits;Watt;IEEE Trans. Elect. Dev.,1989

5. Dependence of LDD Device Optimization on Stressing Parameters at 77 K;Song,1990

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Re-consideration of Correlation between Interface and Bulk Trap Generations using Cryogenic Measurement;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Hot Carrier Degradation in MOSFETs at Cryogenic Temperatures Down to 4.2 K;IEEE Transactions on Device and Materials Reliability;2021-12

3. Device Physics and Electrical Performance of Bulk Silicon Mosfets;Device and Circuit Cryogenic Operation for Low Temperature Electronics;2001