The effect of interconnection resistance on the performance enhancement of liquid-nitrogen-cooled CMOS circuits
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/1332/00030964.pdf?arnumber=30964
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Cryogenically Cooled CMOS;Critical Reviews in Solid State and Materials Sciences;1999-03
2. New understanding of LDD NMOS hot-carrier degradation and device lifetime at cryogenic temperatures;Microelectronics Reliability;1997-10
3. Performance potential of low-voltage power MOSFETs in liquid-nitrogen-cooled power systems;IEEE Transactions on Electron Devices;1991-04
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