Author:
Pacelli A,Lacaita A.L,Spinelli A,Bez R
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Advantages of thermal nitrided and nitroxide gate films in VLSI process;Ito;IEEE Trans. Electron Dev.,1982
2. Furnace nitridation of thermal SiO2 in pure N2O ambient for ULSI MOS applications;Ahn;IEEE Electron Dev. Lett.,1991
3. Inversion layer mobility of MOSFETs with nitrided oxide gate dielectrics;Schmidt;IEEE Trans. Electron Dev.,1988
4. Inversion layer mobility under high normal field in nitrided-oxide MOSFETs;Hori;IEEE Trans. Electron Dev.,1990
5. Perron, L., Lacaita, A. L., Guzzetti, S. and Bez, R., Impact of fast interface states on effective mobility of heavily-doped MOSFETs, In Proc. ESSDERC, 1996, pp. 833–836
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献