Effects of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditions-Reference-Cited by-同舟云学术

Effects of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditions

Published:1997-10 Issue:10-11 Volume:37 Page:1755-1758
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Hamidi A.,Coquery G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Investigations on the damage mechanism of aluminium wire bonds used for high power applications;Poech;Eupac,1996

2. Thermal cycling: first comparative tests on presspacked and direct bonding technology for GTO and IGBT;Coquery;ESREF,1993

3. Reliability of the 400A IGBT modules for traction converters contribution on the power thermal fatigue influence on life expectancy;Coquery;EPE,1995

4. Reliability testing and analysis of IGBT power semiconductor modules;Jacob,1995

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