Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference36 articles.
1. Buchanan, D. A. and Lo, S.-H., The Physics and Chemistry of SiO2 and the Si–SiO2 Interface 3, eds H. Z. Massoud, E. H. Poindexter and C. R. Helms. The Electrochemical Society, Pennington, NJ, 1996, pp. 3–13
2. Ogawa, S., Shimaya, M. and Shiono, N., Interface-trap generation at ultrathin SiO2(4–6nm)–Si interfaces during negative-bias temperature aging. J. Appl. Phys., 1995, 77, 1137–1148; Ogawa, S., Shimaya, M. and Shiono, N., Impact of negative-bias temperature instability on the lifetime of single-gate CMOS structures with ultrathin (4–6nm) gate oxides. Jpn J. Appl. Phys., 1996, 35, 1484–1490
3. Fischetti, M. V. and Laux, S., Monte Carlo study of sub-band-gap impact ionization in small silicon field-effect transistors. IEEE IEDM Tech. Dig., 1995, 305–307
4. Atomic-scale desorption through electronic and vibrational excitation mechanisms;Shen;Science,1995
5. STM-induced H atom desorption from Si(100): isotope effects and site selectivity;Avouris;Chem. Phys. Lett.,1996
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