Author:
Gourbeyre C.,Chassagne T.,Le Berre M.,Ferro G.,Gautier E.,Monteil Y.,Barbier D.
Subject
Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. G. Carter, J.B. Casady, M. Okhuysen, J.D. Scofield, S.E. Saddow, in: Proceedings of the International Conference on SiC and Related Materials (ICSCRM), Raleigh, NC, USA, 10–15 October 1999.
2. Atomic force microscopy growth modeling of SiC buffer layers on Si(100) and quality optimization
3. Sic Thin Film Characterization and Stress Measurements for High Temperature Sensors Applications
4. Relaxation of interfacial stress and improved quality of heteroepitaxial 3C–SiC films on (100)Si deposited by organometallic chemical vapor deposition at 1200 °C
5. C. Gourbeyre, T. Chassagne, M. Le Berre, G. Ferro, C. Malhaire, Y. Monteil, D. Barbier, Mater. Res. Soc. Symp. Proc. 657 (2001).
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