Measurement of the pressure response of boron-doped CVD diamond piezoresistors as a function of resistivity and electric field-Reference-Cited by-同舟云学术

Measurement of the pressure response of boron-doped CVD diamond piezoresistors as a function of resistivity and electric field

Published:1998-06 Issue:1 Volume:69 Page:27-32
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Sahli Sondes,Aslam D.M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Diamond a novel sensing material;Vaseashta;J. Intelligent Material Systems and Structures,1993

2. Piezores-istivity in vapordeposited diamond films;Aslam;Appl. Physics Lett.,1992

3. Piezoresistive effect in borondoped diamond thin films;Dorsch,1992

4. Fabrication characterization of doped polycrystalline diamond film (PDF) for strain sensing applications;Wur,1993

5. Piezoresistive property of CVD diamond films ,presented at Diamond '96 (Diamond Films jointly with ICNDST-5);Deguchi,1996

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