GaAs1-Sb /GaAs single quantum well for long wavelength photonic devices
Author:
Funder
Ministry of Science and Technology
Publisher
Elsevier BV
Reference19 articles.
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3. GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 µm;Sadofyev;Semiconductors,2010
4. GaAsSb: a novel material for near infrared photodetectors on GaAs substrates;Xiaoguang;IEEE J. Sel. Top. Quantum Electron.,2002
5. Photoluminescence and band alignment of strained GaAsSb /GaAs QW structures grown by MBE on GaAs;Sadofyev;Materials (Basel),2010
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