Epitaxy of atomically flat CaF2 films on Si(111) substrates-Reference-Cited by-同舟云学术

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Epitaxy of atomically flat CaF2 films on Si(111) substrates

Published:2002-05 Issue:1-2 Volume:410 Page:72-75
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Wang C.R.,Müller B.H.,Hofmann K.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. CaF2/CdF2 Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio

2. Growth and characterization of single crystal insulators on silicon

3. M.A. Olmstead, in: A.W.K. Liu, M. Santos (Eds.), 1999, Thin Films: Heteroepitaxial Systems, World Scientific, Singapore, p. 211.

4. Photoemission study of bonding at theCaF2-on-Si(111) interface

5. Electronic structure of theCaF2/Si(111) interface

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1. From Salt to Electronics: Heteroepitaxy and GaAs Solar Cells;Advanced Materials Interfaces;2022-08-17

2. Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data;Physical Review B;2018-03-15

3. Initial CaF2 reactions on Si(1 1 4)-2 × 1: Isolated silicides, faceting and partial CaF adsorption;Applied Surface Science;2015-12

4. Multifractal analysis of sputtered CaF2thin films;Surface and Interface Analysis;2013-10-18

5. Self-limited growth of the CaF nanowire on the Si(5 5 12)-2×1 template;Surface Science;2012-10

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