Author:
Ohshita Yoshio,Ogura Atsushi,Ishikawa Masato,Hoshino Asako,Hiiro Shigeki,Suzuki Toshie,Machida Hideaki
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon
2. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
3. Symposium on VLSI Technology Digest of Technical Papers, Honolulu, USA, June 15–17;Kang,2000
4. Proceedings of MRS High-k Gate Dielectric Workshop, New Orleans, USA;Lee,2000
5. Proceedings of MRS High-k Gate Dielectric Workshop, New Orleans, USA;Campbell,2000
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