Dry patterning of copper films using an O2 plasma and hexafluoroacetylacetone-Reference-Cited by-同舟云学术

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Dry patterning of copper films using an O2 plasma and hexafluoroacetylacetone

Published:2001-07 Issue:1 Volume:392 Page:122-127
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Lee Wonhee,Yang Hee-Jeong,Reucroft P.J.,Soh Hoe-Sup,Kim Jeong-Hyun,Woo Sang-Lok,Lee Jaegab

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Double-level copper interconnections using selective copper CVD

2. Selective and blanket copper chemical vapor deposition for ultra-large-scale integration

3. Copper Chemical Vapor Deposition Films Deposited from Cu(1,1,1,5,5,5-hexafluoroacetylacetonate) vinyltrimethylsilane

4. Copper metallization for ULSL and beyond

5. Simulations of stress evolution and the current density scaling of electromigration-induced failure times in pure and alloyed interconnects

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1. Limiting or Continuous Thermal Etching of First Row Transition Metal Oxides Using Acetylacetone and Ozone;Chemistry of Materials;2024-08-02

2. Two-Step Cyclic Etching of Copper Thin Films Using Acetylacetone/O₂ Gases;ECS Journal of Solid State Science and Technology;2023-07-01

3. A low-damage copper removal process by femtosecond laser for integrated circuits;Vacuum;2022-09

4. Mechanism of texture formation in submicron Cu thin films;Journal of Materials Research and Technology;2021-11

5. Etch Characteristics of Copper Thin Films in Inductively Coupled Plasma of Piperidine/Ethanol/Ar Gas Mixture;ECS Journal of Solid State Science and Technology;2021-05-01

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