Comparative analysis of minority carrier transport in npn bipolar transistors with Si, Si 1−x Ge x , and Si 1−y C y base layers-Reference-Cited by-同舟云学术

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Comparative analysis of minority carrier transport in npn bipolar transistors with Si, Si 1−x Ge x , and Si 1−y C y base layers

Published:2000-07 Issue:1-2 Volume:369 Page:347-351
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Heinemann B.,Knoll D.,Fischer G.G.,Schley P.,Osten H.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Measurement of hole mobility in heavily doped n-type silicon

2. Electron transport in heavily doped bases of InP/GaInAs HBT's probed by magneto transport experiments

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carbon Doping of SiGe;SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices;2007-12-13

2. Carbon Doping of SiGe;Silicon Heterostructure Handbook;2005-11

3. Effects of carbon codoping on lattice locations of erbium in silicon;Applied Physics Letters;2002-10-07

4. Carbon-containing heteroepitaxial silicon and silicon/germanium thin films on Si(001);Handbook of Thin Films;2002

5. Dopant diffusion control by adding carbon into Si and SiGe: principles and device application;Materials Science and Engineering: B;2001-12

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