High temperature-induced crystallization in tantalum pentoxide layers and its influence on the electrical properties-Reference-Cited by-同舟云学术

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High temperature-induced crystallization in tantalum pentoxide layers and its influence on the electrical properties

Published:2003-02 Issue:1-2 Volume:426 Page:191-199
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Atanassova E,Kalitzova M,Zollo G,Paskaleva A,Peeva A,Georgieva M,Vitali G

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications

2. Thin RF sputtered and thermal Ta2O5 on Si for high density DRAM application

3. Alternative dielectrics to silicon dioxide for memory and logic devices

4. High-κ gate dielectrics: Current status and materials properties considerations

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1. Full factorial analysis of gradual switching in thermally oxidized memristive devices;Journal of Applied Physics;2024-06-17

2. Oxidation behavior and atomic structural transition of size-selected coalescence-resistant tantalum nanoclusters;Nanotechnology;2024-05-17

3. Influence of post-deposition annealing on electrical and optical properties of (Ta2O5)1-x - (TiO2)x thin films, x ≤ 0.08;Ceramics International;2021-06

4. Annealing temperature-dependent structural and electrical properties of (Ta2O5)1-x - (TiO2)x thin films, x ≤ 0.11;Ceramics International;2021-05

5. Refined analysis of C–V and I–V characteristics of Al/dielectric/Si structures containing nanosized Ta2O5/SiOxNy dielectric stack;Journal of Physics D: Applied Physics;2020-11-10

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