InGaP/GaAs heterojunction bipolar transistor optical and electronic band structure characterization-Reference-Cited by-同舟云学术

InGaP/GaAs heterojunction bipolar transistor optical and electronic band structure characterization

Published:2000-03 Issue:1-2 Volume:364 Page:58-63
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Murtagh M,Beechinor J.T,Cordero N,Kelly P.V,Crean G.M,Farrell I.L,O'Connor G.M,Bland S.W

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference11 articles.

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Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Determination of structural parameters in heterojunction bipolar transistors by x-ray diffraction with (002) reflection;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-05

2. Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p+GaAs base layers;Materials Science and Engineering: B;2001-03

3. Study of semiconductor surfaces and interfaces using electromodulation;Surface and Interface Analysis;2001

4. Surface photovoltage spectroscopy and contactless electroreflectance characterization of a GaInP/GaAs heterojunction bipolar transistor structure;2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498);2000