Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p+GaAs base layers-Reference-Cited by-同舟云学术

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Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p+GaAs base layers

Published:2001-03 Issue:1-3 Volume:80 Page:284-288
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Moriarty G.R.,Murtagh M.,Cherkaoui K.,Gouez G.,Kelly P.V.,Crean G.M.,Bland S.W.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE

2. Lattice contraction in carbon-doped GaAs epilayers

3. The presence of isolated hydrogen donors in heavily carbon-doped GaAs

4. Current status of reliability of InGaP/GaAs HBTs

5. InGaP/GaAs heterojunction bipolar transistor optical and electronic band structure characterization

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs;Journal of Crystal Growth;2003-02

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